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PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
Rev. 02 -- 25 August 2009 Product data sheet
1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients.
1.2 Features
I I I I ESD protection of two lines Max. peak pulse power: PPP = 350 W Low clamping voltage: VCL = 26 V Small SMD plastic package I I I I Ultra low leakage current: IRM < 90 nA ESD protection up to 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 15 A
1.3 Applications
I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection
1.4 Quick reference data
Table 1. Symbol VRWM Quick reference data Parameter reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Cd diode capacitance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VR = 0 V; f = 1 MHz 101 75 19 16 11 pF pF pF pF pF 3.3 5.0 12 15 24 V V V V V Conditions Min Typ Max Unit
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description cathode 1 cathode 2 double cathode
1 2
2
006aaa155
Simplified outline
3
Symbol
1 3
3. Ordering information
Table 3. Ordering information Package Name PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Description plastic surface mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4. Marking codes Marking code[1] V3* V4* V5* V6* V7* Type number PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
2 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP peak pulse current PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Tj Tamb Tstg
[1] [2]
Conditions tp = 8/20 s
[1][2]
Min -
Max 350 350 200 200 200 15 13 5 5 3 150 +150 +150
Unit W W W W W A A A A A C C C
tp = 8/20 s
[1][2]
-65 -65
junction temperature ambient temperature storage temperature
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 to 3 or 2 to 3.
Table 6. Symbol VESD
ESD maximum ratings Parameter electrostatic discharge voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT PESDxL2BT series HBM MIL-STD883 23 10 kV kV Conditions IEC 61000-4-2 (contact discharge)
[1][2]
Min
Max
Unit
-
30
kV
[1] [2]
Device stressed with ten non-repetitive ESD pulses. Measured from pin 1 to 3 or 2 to 3.
Table 7.
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
ESD Standard IEC 61000-4-2, level 4 (ESD) HBM MIL-STD883, class 3
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
3 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
001aaa631
120 IPP (%) 80 100 % IPP; 8 s
001aaa630
IPP 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
4 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
6. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol VRWM Parameter reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IRM reverse leakage current PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VBR breakdown voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Cd diode capacitance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VCL clamping voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP = 1 A IPP = 15 A IPP = 1 A IPP = 13 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 3 A
[1][2]
Conditions
Min -
Typ 0.09 0.01 <1 <1 <1 6.4 7.6 15.8 18.8 27.8
Max 3.3 5.0 12 15 24 2 1 50 50 50 6.9 8.2 16.7 20.3 30.3
Unit V V V V V A A nA nA nA V V V V V
VRWM = 3.3 V VRWM = 5.0 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IR = 5 mA
5.8 7.0 14.2 17.1 25.4
VR = 0 V; f = 1 MHz 101 75 19 16 11 8 26 10 28 20 37 25 44 40 70 pF pF pF pF pF V V V V V V V V V V
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
5 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
Table 8. Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol rdif Parameter differential resistance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT
[1] [2]
Conditions IR = 1 mA
Min -
Typ -
Max 400 80 200 225 300
Unit
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 to 3 or 2 to 3.
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
6 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
104 PPP (W) 103
(1)
006aaa531
1.2 PPP PPP(25C) 0.8
001aaa193
(2)
102
0.4
10 1 10
102
103 tp (s)
104
0 0 50 100 150 Tj (C) 200
Tamb = 25 C (1) PESD3V3L2BT and PESD5V0L2BT (2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT
Fig 3.
Peak pulse power as a function of exponential pulse duration tp; typical values
Fig 4.
Relative variation of peak pulse power as a function of junction temperature; typical values
20
006aaa068
110 Cd (pF) 100
006aaa067
Cd (pF) 16
90
(1)
12
(1)
80 8 70
(2) (2) (3)
60
4
50 0 1 2 3 4 VR (V) 5
0 0 5 10 15 20 VR (V) 25
Tamb = 25 C; f = 1 MHz (1) PESD3V3L2BT (2) PESD5V0L2BT
Tamb = 25 C; f = 1 MHz (1) PESD12VL2BT (2) PESD15VL2BT (3) PESD24VL2BT
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
Fig 6.
Diode capacitance as a function of reverse voltage; typical values
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
7 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
10 IRM IRM(25C)
006aaa069
IPP
(1)
1
-VCL -VBR -VRWM
IR IRM -IRM -IR VRWM VBR VCL
-
+
10-1 -100
-50
0
50
100 Tj (C)
150
-IPP
006aaa676
(1) PESD3V3L2BT, PESD5V0L2BT PESD12VL2BT, PESD15VL2BT and PESD24VL2BT: IRM < 20 nA; Tj = 150 C
Fig 7.
Relative variation of reverse leakage current as a function of junction temperature; typical values
Fig 8.
V-I characteristics for a bidirectional ESD protection diode
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
8 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
ESD TESTER RZ CZ D.U.T. (Device Under Test)
450
RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
IEC 61000-4-2 network CZ = 150 pF; RZ = 330
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 20 V/div; horizontal scale = 50 ns/div PESD24VL2BT GND PESD15VL2BT GND PESD12VL2BT GND PESD5V0L2BT GND
GND GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
PESD3V3L2BT
clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
vertical scale = 20 V/div; horizontal scale = 50 ns/div GND GND PESD3V3L2BT
GND GND
PESD5V0L2BT
PESD12VL2BT
GND
PESD15VL2BT
GND PESD24VL2BT vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
006aaa162
Fig 9.
ESD clamping test setup and waveforms
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
9 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
7. Application information
The PESDxL2BT series is designed for the protection of two bidirectional signal lines from the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on lines where the signal polarities are above and below ground. The PESDxL2BT series provides a surge capability of up to 350 W per line for an 8/20 s waveform.
line 1 to be protected line 2 to be protected
PESDxL2BT
GND
006aaa163
Fig 10. Application diagram
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxL2BT as close to the input terminal or connector as possible. 2. The path length between the PESDxL2BT and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
10 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
8. Package outline
3.0 2.8
3
1.1 0.9
0.45 0.15 2.5 1.4 2.1 1.2
1
2
1.9 Dimensions in mm
0.48 0.38
0.15 0.09 04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
9. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT
[1] For further information and the availability of packing methods, see Section 12.
Package SOT23
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -215 10000 -235
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
11 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
10. Revision history
Table 10. Revision history Release date 20090825 Data sheet status Product data sheet Change notice Supersedes PESDXL2BT_SER_1 Document ID PESDXL2BT_SER_2 Modifications:
* *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 2 "Pinning": amended Product data sheet -
PESDXL2BT_SER_1
20051101
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
12 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESDXL2BT_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 25 August 2009
13 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 August 2009 Document identifier: PESDXL2BT_SER_2

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